Poly hydroxystyrene photoresist
WebThe present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with acrylate, methacrylate or a … WebNew positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group p. 125 Quantitative analysis of chemically amplified negative photoresist using mirror-backed infrared reflection absorption spectroscopy p. 143 Characterization and modeling of a positive-acting chemically amplified resist p. 153
Poly hydroxystyrene photoresist
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WebNov 8, 2016 · As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as … WebMay 4, 2005 · As 193 nm immersion lithography continues to evolve, the need to understand the effect of the immersing liquid on the resulting photoresist properties continues to grow. With this in mind, the sorption of water (using both liquid and vapor environments) in two model photoresist polymer resins based on functionalized poly norbornene) was …
WebMay 16, 1994 · Novolak-polyhydroxystyrene copolymers with a high glass transition temperature were synthesized. Copolymers with different compositions (Novolak/PHS ratio) show improved resin characteristics, compared to either novolak or novolak/PHS blend. The novolak-PHS copolymer formation is confirmed by carbon-13 NMR spectroscopy. This … Webpolymer and metal structures, after electroplating and stripping and also in the case of Proton Beam Writing. 1 Introduction Polymer structures with high thickness and at the same time small lateral critical dimensions (High Aspect Ratio, HAR) have gained significant attention during the last 15 years. Such structures are traditionally ...
WebA Practical Route for the Preparation of Poly(4-hydroxystyrene), a Useful Photoresist Material J. MOHAMMED NASRULLAH,1 S. RAJA,1 K. VIJAYAKUMARAN,2 R. DHAMODHARAN1 1 Department of Chemistry, Indian Institute of Technology, Madras, … WebINIS Repository Search provides online access to one of the world's largest collections on the peaceful uses of nuclear science and technology. The International Nuclear Information System is operated by the IAEA in collaboration with over 150 members.
WebThe high Tg plays a key role in increasing the resolution by inhibiting the diffusion of the acid catalyst in the chemical-amplified photoresist system. By comparing the degree of acid diffusion with a dendritic hexaphenol (dHPhOH) derivative similar with dOPhOH, it was confirmed that the diffusion characteristics were significantly lower at the …
WebJul 19, 2002 · The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial resolution. However, nanometer-level control of this critical process is limited by the lack of direct measurements of the reaction front. We demonstrate the use of x-ray and neutron … stretch zone bluffton scWebMay 16, 1994 · Novolak-polyhydroxystyrene copolymers with a high glass transition temperature were synthesized. Copolymers with different compositions (Novolak/PHS ratio) show improved resin characteristics, compared to either novolak or novolak/PHS blend. The novolak-PHS copolymer formation is confirmed by carbon-13 NMR spectroscopy. This … stretch zone dothan alWebJan 1, 2007 · PDF On Jan 1, 2007, Qinghuang Lin published Properties of Photoresist Polymers ... Effects of protection level and photoacid generator on the dissolution of poly(4-hydroxystyrene-co-t-butyl ... stretch zone fort millWebUnderstanding the dissolution behavior of photoresist materials is an important step in being able to control their lithographic performance. In this paper, we present a fundamental study of dissolution behavior of a new type of photoresist based on molecular glasses (MGs). This study focuses on MG resists derived from a phenolic functionality similar to … stretch zone fishersWebFeb 1, 2002 · The deprotection reaction front profile between exposed and unexposed regions of a chemically amplified photoresist can limit the ultimate feature resolution (i.e. image blur and CD control). Factors that affect the reaction front include the diffusion of the photogenerated acid, the catalytic length of the regenerated acid, composition of the ... stretch zone fort mill scWebThe bis-azide compound shown in Fig. 3, when formulated with cyclized poly(cis-isoprene) was the photoresist system of choice in semiconductor manufacturing for ... anionically prepared poly(4-hydroxystyrene), using BuLi at −78 °C in THF, shows considerably more … stretch zone lexington scWebApr 16, 2014 · Synchrotron radiation spectroscopy enables analysis of chemical reactions that increase the sensitivity of extreme UV photoresists for patterning semiconductor materials. ... both the model resists A and B used poly hydroxystyrene- co-t-butylacrylate as the base polymer, and propyleneglycol monomethyletheracetate as a solvent. stretch zone gaithersburg md